Characteristics of P-channel GaN MOSFET up to 300 °C

Sang Woo Han, Jianan Song, Rongming Chu. Characteristics of P-channel GaN MOSFET up to 300 °C. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 147-148, IEEE, 2019. [doi]

Abstract

Abstract is missing.