New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs

P. Fakhimi, W. D. Zhang, T. A. Growden, E. R. Brown, R. Droopad, K. M. Hansen, P. R. Berger. New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 119-120, IEEE, 2019. [doi]

Abstract

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