New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs

P. Fakhimi, W. D. Zhang, T. A. Growden, E. R. Brown, R. Droopad, K. M. Hansen, P. R. Berger. New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 119-120, IEEE, 2019. [doi]

@inproceedings{FakhimiZGBDHB19,
  title = {New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs},
  author = {P. Fakhimi and W. D. Zhang and T. A. Growden and E. R. Brown and R. Droopad and K. M. Hansen and P. R. Berger},
  year = {2019},
  doi = {10.1109/DRC46940.2019.9046392},
  url = {https://doi.org/10.1109/DRC46940.2019.9046392},
  researchr = {https://researchr.org/publication/FakhimiZGBDHB19},
  cites = {0},
  citedby = {0},
  pages = {119-120},
  booktitle = {Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-2112-3},
}