Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs

Ankur Nipane, Punnu Jose Sebastian, Younghun Jung, Min Sup Choi, Abhinandan Borah, Won Jong Yoo, James Hone, James T. Teherani. Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 231-232, IEEE, 2019. [doi]

Abstract

Abstract is missing.