Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs - researchr publication authors

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Ankur Nipane, Punnu Jose Sebastian, Younghun Jung, Min Sup Choi, Abhinandan Borah, Won Jong Yoo, James Hone, James T. Teherani. Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 231-232, IEEE, 2019. [doi]

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