Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs

Ankur Nipane, Punnu Jose Sebastian, Younghun Jung, Min Sup Choi, Abhinandan Borah, Won Jong Yoo, James Hone, James T. Teherani. Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 231-232, IEEE, 2019. [doi]

@inproceedings{NipaneSJCBYHT19,
  title = {Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs},
  author = {Ankur Nipane and Punnu Jose Sebastian and Younghun Jung and Min Sup Choi and Abhinandan Borah and Won Jong Yoo and James Hone and James T. Teherani},
  year = {2019},
  doi = {10.1109/DRC46940.2019.9046402},
  url = {https://doi.org/10.1109/DRC46940.2019.9046402},
  researchr = {https://researchr.org/publication/NipaneSJCBYHT19},
  cites = {0},
  citedby = {0},
  pages = {231-232},
  booktitle = {Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-2112-3},
}