High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper) - researchr publication

researchr

You are not signed in
Sign in
Sign up

Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz Gardner, Seung-Hoon Sung, Paul Fischer. High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper). In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 39-40, IEEE, 2019. [doi]

Abstract is missing.

runs on WebDSL