S. Mittal, A. Pal, M. Saremi, J. Ferrell, M. Haverty, T. Miyashita, N. Kim, E. M. Bazizi, B. Alexander, A. B. Sachid, B. Ayyagari. Highly-Doped Through-Contact Silicon Epi Design at 3 nm node. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 55-56, IEEE, 2019. [doi]
Abstract is missing.