S. Mittal, A. Pal, M. Saremi, J. Ferrell, M. Haverty, T. Miyashita, N. Kim, E. M. Bazizi, B. Alexander, A. B. Sachid, B. Ayyagari. Highly-Doped Through-Contact Silicon Epi Design at 3 nm node. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 55-56, IEEE, 2019. [doi]
@inproceedings{MittalPSFHMKBAS19,
title = {Highly-Doped Through-Contact Silicon Epi Design at 3 nm node},
author = {S. Mittal and A. Pal and M. Saremi and J. Ferrell and M. Haverty and T. Miyashita and N. Kim and E. M. Bazizi and B. Alexander and A. B. Sachid and B. Ayyagari},
year = {2019},
doi = {10.1109/DRC46940.2019.9046479},
url = {https://doi.org/10.1109/DRC46940.2019.9046479},
researchr = {https://researchr.org/publication/MittalPSFHMKBAS19},
cites = {0},
citedby = {0},
pages = {55-56},
booktitle = {Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019},
publisher = {IEEE},
isbn = {978-1-7281-2112-3},
}