Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction

Shalini Lal, Jing Lu, Brian J. Thibeault, Man Hoi Wong, Chris G. Van de Walle, Steven P. DenBaars, Umesh K. Mishra. Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 149-150, IEEE, 2019. [doi]

Abstract

Abstract is missing.