Flat band voltage shift and oxide properties after rapid thermal annealing

B. J. O Sullivan, P. K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven. Flat band voltage shift and oxide properties after rapid thermal annealing. Microelectronics Reliability, 41(7):1053-1056, 2001. [doi]

Abstract

Abstract is missing.