Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

C. Y. Chen, L. Goux, A. Fantini, Robin Degraeve, A. Redolfi, Guido Groeseneken, Malgorzata Jurczak. Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 262-265, IEEE, 2015. [doi]

Abstract

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