Rajarshi Roy Chaudhuri - researchr alias

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Viewing Publication 1 - 11 from 11

2024

Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTsRajarshi Roy Chaudhuri, Vipin Joshi, Saniya S. Wani, Simran R. Karthik, Rasik Rashid Malik, Mayank Shrivastava. irps 2024: 1-6 [doi]

On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTsMehak Ashraf Mir, A. Thakare, Mohammad Ateeb Munshi, V. Avinash, Saniya S. Wani, Zubear Khan, Rajarshi Roy Chaudhuri, Simran R. Karthik, Rasik Rashid Malik, Vipin Joshi, Mayank Shrivastava. irps 2024: 1-5 [doi]

Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETsAsif A. Shah, Rupali Verma, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, Jeevcsh Kumar, Anand Kumar Rai, Sumana Chattaraj, Mayank Shrivastava. irps 2024: 1-4 [doi]

Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETsRupali Verma, Utpreksh Patbhaje, Asif Altaf Shah, Jeevesh Kumar, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, Mayank Shrivastava. irps 2024: 74 [doi]

2023

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability ConsequencesRajarshi Roy Chaudhuri, Vipin Joshi, Amratansh Gupta, Tanmay Joshi, Rasik Rashid Malik, Mehak Ashraf Mir, Sayak Dutta Gupta, Mayank Shrivastava. irps 2023: 1-5 [doi]

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN BufferVipin Joshi, Sayak Dutta Gupta, Rajarshi Roy Chaudhuri, Mayank Shrivastava. irps 2023: 1-4 [doi]

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTsRasik Rashid Malik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mehak Ashraf Mir, Zubear Khan, Avinas N. Shaji, Madhura Bhattacharya, Anup T. Vitthal, Mayank Shrivastava. irps 2023: 1-4 [doi]

Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTsMehak Ashraf Mir, Vipin Joshi, Rajarshi Roy Chaudhuri, Mohammad Ateeb Munshi, Rasik Rashid Malik, Mayank Shrivastava. irps 2023: 1-6 [doi]

Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier DiodesHarsh Raj, Vipin Joshi, Rajarshi Roy Chaudhuri, Rasik Rashid Malik, Mayank Shrivastava. irps 2023: 1-4 [doi]

2020

On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTsSayak Dutta Gupta, Vipin Joshi, Rajarshi Roy Chaudhuri, Anant kr Singh, Sirsha Guha, Mayank Shrivastava. irps 2020: 1-4 [doi]

2019

Noise Analysis-Resonant Frequency-Based Combined Approach for Concomitant Detection of Unknown Vapor Type and ConcentrationDebanjan Acharyya, Rajarshi Roy Chaudhuri, Partha Bhattacharyya. tim, 68(8):3004-3011, 2019. [doi]

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