Muhammad Ashraful Alam - researchr alias

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Viewing Publication 1 - 27 from 27

2024

Robustness of Quantum Federated Learning (QFL) Against "Label Flipping Attacks" for Lithography Hotspot Detection in Semiconductor ManufacturingAmandeep Singh Bhatia, Sabre Kais, Muhammad Ashraful Alam. irps 2024: 1-4 [doi]

Validating Supply Chain against Recycled COTS ICs using I/O Pad Transistors: A Zero-Area Intrinsic Odometer ApproachMd. Asaduz Zaman Mamun, Nathan J. Conrad, Saeed Mohammadi, Muhammad Ashraful Alam. irps 2024: 1-8 [doi]

2023

Transient Leakage Current as a Non-destructive Probe of Wire-bond Electrochemical FailuresMd. Asaduz Zaman Mamun, Amar Mavinkurve, Michiel van Soestbergen, Muhammad Ashraful Alam. irps 2023: 1-7 [doi]

Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone QuantifiedSruthi M. P, Md. Asaduz Zaman Mamun, Deleep R. Nair, Anjan Chakravorty, Nandita DasGupta, Amitava Dasgupta, Muhammad Ashraful Alam. irps 2023: 1-6 [doi]

2-Based Ferroelectric FETs: A Critical Review of Current and Future ChallengesNicolò Zagni, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam. pieee, 111(2):158-184, February 2023. [doi]

Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 AnnealingZhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye. vlsit 2023: 1-2 [doi]

2022

Principles of Solar Cells - Connecting Perspectives on Device, System, Reliability, and Data ScienceMuhammad Ashraful Alam, M. Ryyan Khan. WorldScientific, 2022. [doi]

Training a Quantum Annealing Based Restricted Boltzmann Machine on Cybersecurity DataVivek Dixit, Raja Selvarajan, Tamer Aldwairi, Yaroslav Koshka, Mark A. Novotny, Travis S. Humble, Muhammad Ashraful Alam, Sabre Kais. tetci, 6(3):417-428, 2022. [doi]

A Critical Analysis of Bifacial Solar Farm Configurations: Theory and ExperimentsJabir Bin Jahangir, Md. Al-Mahmud, Md. Shahadat Sarker Shakir, Anisul Haque, Muhammad Ashraful Alam, M. Ryyan Khan. access, 10:47726-47740, 2022. [doi]

Steady-State and Transient Performance of Ion-Sensitive Electrodes Suitable for Wearable and Implantable Electro-Chemical SensingXin Jin, Ajanta Saha, Hongjie Jiang, Muhammed Ramazan Oduncu, Qingyu Yang, Sotoudeh Sedaghat, Kerry Maize, Jan P. Allebach, Ali Shakouri, Nicholas Glassmaker, Alexander Wei, Rahim Rahimi, Muhammad Ashraful Alam. tbe, 69(1):96-107, 2022. [doi]

Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS TransistorsBikram Kishore Mahajan, Yen-Pu Chen, Ulisses Alberto Heredia Rivera, Rahim Rahimi, Muhammad Ashraful Alam. irps 2022: 52-1 [doi]

A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS TransistorsBikram Kishore Mahajan, Yen-Pu Chen, Muhammad Ashraful Alam, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy. irps 2022: 10 [doi]

2021

Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping TechniqueBikram Kishore Mahajan, Yen-Pu Chen, Dhanoop Varghese, Vijay Reddy, Srikanth Krishnan, Muhammad Ashraful Alam. irps 2021: 1-6 [doi]

2020

A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS TransistorsYen-Pu Chen, Bikram Kishore Mahajan, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy, Muhammad Ashraful Alam. irps 2020: 1-6 [doi]

2019

An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Material Selection (Cu, Co, Ru) and Cooling StrategiesWoojin Ahn, Yen-Pu Chen, Muhammad Ashraful Alam. irps 2019: 1-6 [doi]

2014

OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A reviewD. Varghese, V. Reddy, S. Krishnan, Muhammad Ashraful Alam. mr, 54(8):1477-1488, 2014. [doi]

2008

Computing Nice Projections of Convex PolyhedraMuhammad Ashraful Alam, Masud Hasan. walcom 2008: 111-119 [doi]

2007

A comprehensive model for PMOS NBTI degradation: Recent progressMuhammad Ashraful Alam, Haldun Kufluoglu, D. Varghese, S. Mahapatra. mr, 47(6):853-862, 2007. [doi]

Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ MeasurementKunhyuk Kang, Kee-Jong Kim, Ahmad E. Islam, Muhammad Ashraful Alam, Kaushik Roy. dac 2007: 358-363 [doi]

Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performanceKunhyuk Kang, Sang Phill Park, Kaushik Roy, Muhammad Ashraful Alam. iccad 2007: 730-734 [doi]

Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQKunhyuk Kang, Muhammad Ashraful Alam, Kaushik Roy. itc 2007: 1-10 [doi]

Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and AnalysisKunhyuk Kang, Haldun Kufluoglu, Kaushik Roy, Muhammad Ashraful Alam. tcad, 26(10):1770-1781, 2007. [doi]

Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale CircuitsBipul Chandra Paul, Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy. tcad, 26(4):743-751, 2007. [doi]

2006

Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTIKunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy. iccd 2006: 216-221 [doi]

Temporal performance degradation under NBTI: estimation and design for improved reliability of nanoscale circuitsBipul Chandra Paul, Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy. date 2006: 780-785 [doi]

2004

Software Security in Bangladesh with .NET Framework: A RoadmapMuhammad Ashraful Alam. itcc 2004: 438-443 [doi]

2001

A new analytical model for high frequency MOSFET noiseSimona Donati Guerrieri, Fabrizio Bonani, Giovanni Ghione, Muhammad Ashraful Alam. cicc 2001: 389-392 [doi]

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2001

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