Abstract is missing.
- Cryo-CMOS Electronics for Quantum Computing ApplicationsEdoardo Charbon. 1-6 [doi]
- 28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others ApplicationsFranck Arnaud, Sébastien Haendler, Sylvain Clerc, Rossella Ranica, Anna Gandolfo, Olivier Weber. 7-10 [doi]
- CMOS interface with biological molecules and cells : Invited review paperJeffrey Abbott, Tianyang Ye, Hongkun Park, Donhee Ham. 13-16 [doi]
- GaN based HEMT technology for Power and RF applicationsMichael Heuken. 17-20 [doi]
- Review of candidate devices for neuromorphic applicationsJong-Ho Lee, Yoohyun Noh, Hyeongsu Kim, Jangsaeng Kim, Jong-Ho Bae, Sung Yun Woo, Sungtae Lee, Suhwan Lim, Won-Mook Kang, Young-Tak Seo, Soochang Lee, Dongseok Kwon, Seongbin Oh. 22-27 [doi]
- I. Double-Sided Cooling Technology for EmobilityKlaus Pressel, Andreas Grassmann, Markus Fink, Guenter Tutsch. 28-30 [doi]
- Current SiC Power Device Development, Material Defect Measurements and Characterization at BoschDaniel Baierhofer. 31-34 [doi]
- Power Packages Interconnections for High Reliability Automotive ApplicationsMichele Calabretta, Marco Renna, Vincenzo Vinciguerra, Angelo Alberto Messina. 35-39 [doi]
- Pixelated Light: Merging microelectronics and photonicsDominik Scholz, Stefan Groetsch, Michael Wittmann, Alexander Pfeuffer, Martin Strassburg, Andreas Ploessl. 40-43 [doi]
- Bosch MEMS Foundry ServiceStefan Majoni. 44-46 [doi]
- Micro-Transfer-Printing - A unique technology for heterogeneous integration of (opto-) electronic componentsGabriel Kittler. 47-49 [doi]
- Silicon Photomultipliers Technology at Fondazione Bruno Kessler and 3D Integration PerspectivesGiovanni Paternoster, Lorenza Ferrario, Fabio Acerbi, Alberto Giacomo Gola, Pierluigi Bellutti. 50-53 [doi]
- Challenges and capabilities of 3D integration in CMOS imaging sensorsDominique Thomas, Jean Michailos, Krysten Rochereau. 54-56 [doi]
- Excursion prevention and increasing device performance using mask correction for intrafield CD and Overlay improvementThomas Scherübl, Yael Sufrin, Avi Cohen, Ofir Sharoni, Rolf Seltmann. 57-60 [doi]
- High-NA EUV Optics - The key for miniaturization of integrated circuits in the next decadeHeiko Feldmann, Paul Gräupner, Peter Kürz, Winfried Kaiser. 61-63 [doi]
- 22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic ScaleW. Schwarzenbach, L. Loubriat, V. Joseph, L. Viravaux, O. Moreau, S. Lasserre, B.-Y. Nguyen. 64-65 [doi]
- How to Achieve World-Leading Energy Efficiency using 22FDX with Adaptive Body Biasing on an Arm Cortex-M4 IoT SoCSebastian Höppner, Jörg Schreiter, Robert Niebsch, Stephan Scherzer, Ulrich Hensel, Jörg Winkler, Mario Orgis, Holger Eisenreich, Dennis Walter, Uwe Steeb, André Scharfe Clifford Dmello, Robert Sinkwitz, Heiner Bauer, Alexander Oefelein, Florian Schraut. 66-69 [doi]
- 22FDX™ Technology and Add-on-FunctionalitiesMaciej Wiatr, Sabine Kolodinski. 70-73 [doi]
- IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GFSabine Kolodinski, B. Peng, C. Esposito, Y. Zimmermann, Michael Schröter, X. Xu, Paolo Valerio Testa, Corrado Carta, Frank Ellinger, S. Lehmann, M. Drescher, C. Mart, M. Wiatr, Wenke Weinreich, V. Sessi, Jens Trommer, T. Chohan, H. Mulaosmanovic, W. M. Weber, Stefan Slesazeck. 74-77 [doi]
- Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETsAditi Agarwal, Kijeong Han, B. Jayant Baliga. 78-81 [doi]
- Characterization and Modeling of BTI in SiC MOSFETsD. Cornigli, A. N. Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, L. Sanchez, C. Valdivieso, G. Consentino, Felice Crupi. 82-85 [doi]
- TCAD predictions of hot-electron injection in p-type LDMOS transistorsF. Giuliano, R. Depetro, Giuseppe Croce, A. N. Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, A. Molfese, S. Manzini. 86-89 [doi]
- Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency OperationP. Sai, Dmytro B. But, M. Dub, Maciej Sakowicz, B. Grzywacz, P. Prystawko, Grzegorz Cywinski, Wojciech Knap, S. Rumyantsev. 90-93 [doi]
- Cryogenic MOSFET Threshold Voltage ModelArnout Beckers, Farzan Jazaeri, Christian Enz. 94-97 [doi]
- Subthreshold Mismatch in Nanometer CMOS at Cryogenic TemperaturesP. A. 't Hart, Masoud Babaie, Edoardo Charbon, Andrei Vladimirescu, Fabio Sebastiano. 98-101 [doi]
- Test Chip for Identifying Spice-Parameters of Cryogenic BiFET CircuitsOleg V. Dvornikov, Nikolay N. Prokopenko, Vladimir A. Tchekhovski, Yaroslav D. Galkin, Alexei V. Kunz, Anna V. Bugakova. 102-105 [doi]
- Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensingManeesha Rupakula, Junrui Zhang, Francesco Bellando, Fabien Wildhaber, Clarissa Convertino, Heinz Schmid, Kirsten E. Moselund, Adrian Mihai Ionescu. 106-109 [doi]
- The Module of Gain-controllable Amplifier Readout Circuits based on Si Nanowire ISFET for Biochips for Optimization of Dynamic Range, Linearity, and ResolutionS. Choi, J. Kim, J. Yoon, I. Chae, S. J. Choi, D. M. Kim, H. S. Mo, D. H. Kim. 110-113 [doi]
- 49dB depletion-load amplifiers with polysilicon source-gated transistorsEva Bestelink, S. Ravi P. Silva, Radu A. Sporea, Luca Maiolo, Francesco Maita. 114-117 [doi]
- Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-MemoryEvelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dünkel, Martin Trentzsch, Sven Beyer, Thomas Mikolajick, Stefan Slesazeck. 118-121 [doi]
- Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic ClassifierG. Malavena, S. Petrò, Alessandro S. Spinelli, C. Monzio Compagnoni. 122-125 [doi]
- Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal StageN. Polino, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini. 126-129 [doi]
- SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact ModelFrancesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan. 130-133 [doi]
- Eliminating Charge Sharing in Clocked Logic Gates on the Device Level Employing Transistors with Multiple Independent InputsJens Trommer, Maik Simon, Stefan Slesazeck, Walter M. Weber, Thomas Mikolajick. 134-137 [doi]
- Large Scale MoS2/Si Photodiodes with Graphene Transparent ElectrodesMelkamu Belete, Satender Kataria, Sarah Riazimehr, Gunther Lippert, Mindaugas Lukosius, Daniel S. Schneider, Andreas Bablich, Olof Engström, Max C. Lemme. 138-141 [doi]
- Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion ChannelRyosho Nakane, Shoichi Sato, Masaaki Tanaka. 142-145 [doi]
- Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAMRoberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Gös, Johannes Ender, Simone Fiorentini, Viktor Sverdlov. 146-149 [doi]
- First Uni-Traveling Carrier Photodiode Compact Model Enabling Future Terahertz Communication System DesignChhandak Mukherjee, P. Mounaix, Cristell Maneux, M. Natrella, J. Seddon, C. Graham, C. C. Renaud. 150-153 [doi]
- Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply currentMarine Couret, Gerhard Fischer, Iria Garcia Lopez, Magali De Matos, François Marc, Cristell Maneux. 154-157 [doi]
- Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistorsShuzhen You, X. Li, Stefaan Decoutere, Guido Groeseneken, Z. Chen, J. Liu, Y. Yamashita, K. Kobayashi. 158-161 [doi]
- Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic TemperaturesLucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska. 162-165 [doi]
- ® fMAX Optimization through Parasitics Reduction and GM BoostZhixing Zhao, Patrick James Artz, Klaus Hempel, Juergen Faul, Tianbing Chen, Richard Taylor, Jerome Mazurier, Carsten Grass, Jan Hoentschel, David Harame, Steffen Lehmann, Luca Lucci, Yogadissen Andee, Alexis Divay, Luca Pirro, Tom Herrmann, Alban Zaka, Ricardo Sousa. 166-169 [doi]
- Demonstration and Modelling of Excellent RF Switch Performance of 22nm FD-SOI Technology for Millimeter-Wave ApplicationsS. Yadav, W. H. Chow, A. Bellaouar, J. S. Wong, T. Chen, S. Sekine, C. Schwan, Mei See Chin, G. Workman, Kok Wai J. Chew. 170-173 [doi]
- Low-energy inference machine with multilevel HfO2 RRAM arraysValerio Milo, Cristian Zambelli, Piero Olivo, Eduardo Pérez, O. G. Ossorio, Christian Wenger, Daniele Ielmini. 174-177 [doi]
- Parallel Product-Sum Operation Neuromorphic Systems with 4-bit Ferroelectric FET SynapsesKoki Kamimura, Susumu Nohmi, Kenta Suzuki, Ken Takeuchi. 178-181 [doi]
- The Synergy SPICE - Compact ModelsAndrei Vladimirescu. 182-185 [doi]
- Comparison of modeling approaches for transistor degradation: model card adaptations vs subcircuitsAndré Lange, Fabio A. Velarde Gonzalez, Insaf Lahbib, Sonja Crocoll. 186-189 [doi]
- FOSS EKV2.6 Verilog-A Compact MOSFET ModelWladek Grabinski, Ahmed Abo-Elhadid, Marek Mierzwinski, Laurent Lemaitre, Mike Brinson, Christophe Lallement, Jean-Michel Sallese, Sadayuki Yoshitomi, Paul Malisse, Henri Oguey, Stefan Cserveny, Marcelo Antonio Pavanello, Christian Enz, François Krummenacher, Eric A. Vittoz, Michelly de Souza, Daniel Tomaszewski, Jolanta Malesinska, Grzegorz Gluszko, Matthias Bucher, Nikolaos Makris, Aristeidis Nikolaou. 190-193 [doi]
- Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless TransistorsRenan Trevisoli, Rodrigo Doria, Sylvain Barraud, Marcelo Antonio Pavanello. 194-197 [doi]
- Compact Modeling of Low Frequency Noise and Thermal Noise in Junction Field Effect TransistorsNikolaos Makris, Loukas Chevas, Matthias Bucher. 198-201 [doi]
- Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact ModelAtieh Farokhnejad, Fabian Horst, Benjamín Iñíguez, François Lime, Alexander Kloes. 202-205 [doi]
- Design and Characterization of Monolithic Microring Resonator based Photodetector in 45nm SOI CMOSNandish Mehta, Sidney Buchbinder, Vladimir Stojanovic. 206-209 [doi]
- Body-biasing considerations with SPAD FDSOI: advantages and drawbacksT. Chaves de Albuquerque, D. Issartel, Raphael Clerc, Patrick Pittet, R. Cellier, W. Uhring, Andreia Cathelin, Francis Calmon. 210-213 [doi]
- Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power MicrowavesTsuyoshi Takahashi, Kenichi Kawaguchi, Masaru Sato, Michihiko Suhara, Naoya Okamoto. 214-217 [doi]
- ® FDSOI Transistors for 5G Transmitter Front-EndQuang Huy Le, Dang Khoa Huynh, Defu Wang, Thomas Kämpfe, Steffen Lehmann. 218-221 [doi]
- Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling PerspectiveA. Mannara, Alessandro S. Spinelli, Andrea L. Lacaita, C. Monzio Compagnoni. 222-225 [doi]
- Investigations on current filamentation in PIN diodes using TLP measurements and TCAD simulationsPatrick Scharf, Christoph Sohrmann, Steffen Holland, Volkhard Beyer. 226-229 [doi]
- A Fast Method for Modeling and Optimizing Parasitic Light Sensitivity in Global Shutter CMOS Image SensorsFederico Pace, Olivier Marcelot, Philippe Martin-Gonthier, Olivier Saint-Pé, Michel Breart de Boisanger, Rose-Marie Sauvage, Pierre Magnan. 230-233 [doi]
- Generation of oxide traps in Back-Side-Illuminated CMOS Image Sensors and impact on reliabilityAndrea Vici, Felice Russo, Nicola Lovisi, Aldo Marchioni, Antonio Casella, Fernanda Irrera. 234-237 [doi]
- 2-FET Memory OperationCarlos Marquez, S. Navarro, Carlos Navarro, N. Salazar, Philippe Galy, Sorin Cristoloveanu, Francisco Gámiz. 238-241 [doi]
- Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °CTihomir Knezevic, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Ahmed ElSayed, Jan F. Dick, Jörg Schulze. 242-245 [doi]
- A Novel 4H-SiC UV Photo-transistor based on a Shallow Mesa StructureLuigi Di Benedetto, Gian Domenico Licciardo, Alfredo Rubino. 246-249 [doi]
- Low-Noise and High-Efficiency Near-IR SPADs in 110nm CIS TechnologyIon Vornicu, F. Bandi, Ricardo Carmona-Galán, Ángel Rodríguez-Vázquez. 250-253 [doi]
- Photonic thermal sensor integration towards electronic-photonic-IC technologiesAndreas Mai, Siegfried Bondarenko, Christian Mai, Patrick Steglich. 254-257 [doi]
- Suspended Antenna-Coupled Nanothermocouple Array for Long-Wave Infrared DetectionGergo P. Szakmany, Gary H. Bernstein, Alexei O. Orlov, Wolfgang Porod. 258-261 [doi]
- Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random DopantsAlexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser. 262-265 [doi]
- On the electron mobility of strained InGaAs channel MOSFETsStefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi. 266-269 [doi]
- Circuit-Based Hydrodynamic Modeling of AlGaN/GaN HEMTsFlorian Ludwig, Maris Bauer, Alvydas Lisauskas, Hartmut G. Roskos. 270-273 [doi]