Ryosho Nakane, Shoichi Sato, Masaaki Tanaka. Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel. In 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, September 23-26, 2019. pages 142-145, IEEE, 2019. [doi]
Abstract is missing.