Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

Shuzhen You, X. Li, Stefaan Decoutere, Guido Groeseneken, Z. Chen, J. Liu, Y. Yamashita, K. Kobayashi. Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. In 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, September 23-26, 2019. pages 158-161, IEEE, 2019. [doi]

Abstract

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