Shuzhen You, X. Li, Stefaan Decoutere, Guido Groeseneken, Z. Chen, J. Liu, Y. Yamashita, K. Kobayashi. Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. In 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, September 23-26, 2019. pages 158-161, IEEE, 2019. [doi]
@inproceedings{YouLDGCLYK19,
title = {Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors},
author = {Shuzhen You and X. Li and Stefaan Decoutere and Guido Groeseneken and Z. Chen and J. Liu and Y. Yamashita and K. Kobayashi},
year = {2019},
doi = {10.1109/ESSDERC.2019.8901817},
url = {https://doi.org/10.1109/ESSDERC.2019.8901817},
researchr = {https://researchr.org/publication/YouLDGCLYK19},
cites = {0},
citedby = {0},
pages = {158-161},
booktitle = {49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, September 23-26, 2019},
publisher = {IEEE},
isbn = {978-1-7281-1539-9},
}