Aditi Agarwal, Kijeong Han, B. Jayant Baliga. Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs. In 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, September 23-26, 2019. pages 78-81, IEEE, 2019. [doi]
Abstract is missing.