Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, A. N. Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka. Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-10, IEEE, 2019. [doi]

Abstract

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