Ronald D. Schrimpf - researchr alias

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Viewing Publication 1 - 17 from 17

2023

Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field PlateSajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck. drc 2023: 1-2 [doi]

2021

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTsPeng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng-fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf. asicon 2021: 1-4 [doi]

2018

A TCAD evaluation of a single Bulk-BICS with integrative memory cellAlexandre Simionovski, Gilson I. Wirth, Ronald D. Schrimpf, Bharat L. Bhuva. mj, 80:62-68, 2018. [doi]

2015

2014

Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTsAditya Kalavagunta, Shubhajit Mukherjee, Robert Reed, Ronald D. Schrimpf. mr, 54(3):570-574, 2014. [doi]

Total-ionizing-dose effects and reliability of carbon nanotube FET devicesCher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis. mr, 54(11):2355-2359, 2014. [doi]

2013

An efficient technique to select logic nodes for single event transient pulse-width reductionNihaar N. Mahatme, Indranil Chatterjee, Akash Patki, Daniel B. Limbrick, Bharat L. Bhuva, Ronald D. Schrimpf, William H. Robinson. mr, 53(1):114-117, 2013. [doi]

2012

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologiesNadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li. mr, 52(11):2521-2526, 2012. [doi]

2011

2009

Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modelingSokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf. esscirc 2009: 76-83 [doi]

2008

Total ionizing dose effects in shallow trench isolation oxidesFederico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael McLain, Ronald D. Schrimpf. mr, 48(7):1000-1007, 2008. [doi]

2007

2001

A generalized model for the lifetime of microelectronic components, applied to storage conditionsLoren J. Wise, Ronald D. Schrimpf, Harold G. Parks, Kenneth F. Galloway. mr, 41(2):317-322, 2001. [doi]

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