R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, J. Mekki, André Touboul, Frédéric Saigné. High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectronics Reliability, 51(12):2093-2096, 2011. [doi]
Abstract is missing.