Daniel M. Fleetwood - researchr alias

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Viewing Publication 1 - 17 from 17

2024

2023

Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 DiodesDaniel M. Fleetwood. drc 2023: 1-2 [doi]

Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field PlateSajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck. drc 2023: 1-2 [doi]

2021

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTsPeng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng-fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf. asicon 2021: 1-4 [doi]

2019

Reliability Limiting Defects in MOS Gate Oxides: Mechanisms and Modeling ImplicationsDaniel M. Fleetwood. irps 2019: 1-10 [doi]

2018

Border traps and bias-temperature instabilities in MOS devicesDaniel M. Fleetwood. mr, 80:266-277, 2018. [doi]

The effect of ionization and displacement damage on minority carrier lifetimeJianqun Yang, Xingji Li, Chaoming Liu, Daniel M. Fleetwood. mr, 82:124-129, 2018. [doi]

2015

Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTsA. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, P. Saunier, C. Lee, S. A. Ringel, A. R. Arehart. irps 2015: 2 [doi]

2014

Total-ionizing-dose effects and reliability of carbon nanotube FET devicesCher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis. mr, 54(11):2355-2359, 2014. [doi]

2012

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologiesNadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li. mr, 52(11):2521-2526, 2012. [doi]

2011

2009

Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modelingSokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf. esscirc 2009: 76-83 [doi]

2008

Total ionizing dose effects in shallow trench isolation oxidesFederico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael McLain, Ronald D. Schrimpf. mr, 48(7):1000-1007, 2008. [doi]

2007

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