Table of Contents

• Quantum transport simulations for the next decade: Exploiting quantum topology in emerging 2D-devicesBhaskaran Muralidharan. 1-2 [doi]
• Modeling of variability-aware memristive neural networksRenjith Sasikumar, K. Lakshmi Ganapathi, Durgamadhab Misra, Revathy Padmanabhan. 1-2 [doi]
• Solving optimization tasks power-efficiently exploiting VO2's phase-change properties with Oscillating Neural NetworksOlivier Maher, N. Harnack, Giacomo Indiveri, M. Sousa, Bernd Gotsmann, Siegfried F. Karg. 1-2 [doi]
• ScAlN Based Ferroelectric Field Effect Transistors with ITO ChannelShubham Mondal, Ding Wang, Jiangnan Liu, Yixin Xiao, Ping Wang, Zetian Mi. 1-2 [doi]
• Small Signal Analysis of GaN IMPATT Diodes for W-band and Sub-THz Wave GenerationWenwen Li, Dong Ji. 1-2 [doi]
• Reproducible and High-Temperature Performance of NiO/ $\beta$-Ga2O3 Vertical Rectifiers in Achieving 8.9 kV BreakdownJian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, Steve J. Pearton. 1-2 [doi]
• Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHzMatthias Sinnwell, Michael Dammann, Rachid Driad, Sebastian Krause, Stefano Leone, Michael Mikulla, Rüdiger Quay. 1-2 [doi]
• Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 DiodesDaniel M. Fleetwood. 1-2 [doi]
• Recent Advances in GaN HEMT Modeling using Fermi Kinetics TransportNicholas C. Miller, Matt Grupen, John D. Albrecht. 1 [doi]
• $\alpha$-Ga2O3/Diamond Heterojunction PN Diode: Device Fabrication and TCAD ModellingCristian J. Herrera-Rodriguez, Atsushi Shimbori, Timothy A. Grotjohn. 1-2 [doi]
• Size dependent characteristics of AlGaN-based ultraviolet micro-LEDsYifan Yao, Hongjian Li, Panpan Li, Christian J. Zollner, Michael Wang, Michael Iza, James S. Speck, Steven P. DenBaars, Shuji Nakamura. 1-2 [doi]
• Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodesSuzanne Lancaster, Mattia Segatto, Cláudia Silva, Benjamin Max, Thomas Mikolajick, David Esseni, Francesco Driussi, Stefan Slesazeck. 1-2 [doi]
• RRAM Based On-Sensor Visual Data Preprocessing for Efficient Image ClassificationAshwani Kumar, Sai Sukruth Bezugam. 1-2 [doi]
• A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced StabilityLingyan Shen, Xinhong Cheng, Li Zheng, Yuehui Yu. 1-2 [doi]
• Fully Integrated Flexible RF Detectors in MoS2 and Graphene based MMICPaula Palacios, Eros Reato, Mohamed Saeed, F. Pasadas, Zhenxing Wang, Max C. Lemme, Renato Negra. 1-2 [doi]
• The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD SimulationS. Ahmed, A. Islam, D. Dryden, Kyle J. Liddy, Nolan S. Hendricks, Neil A. Moser, Kelson D. Chabak, Andrew J. Green. 1-2 [doi]
• Up to 100-fold Improvement of Threshold Voltage Stability in ITO TransistorsSumaiya Wahid, Lauren Hoang, Alwin Daus, Eric Pop. 1-2 [doi]
• Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2Agata Piacentini, Dmitry K. Polyushkin, Burkay Uzlu, Annika Grundmann, Michael Heuken, Holger Kalisch, Andrei Vescan, Thomas Mueller, Max C. Lemme, Daniel Neumaier. 1-2 [doi]
• Overcoming the low cell current bottleneck of 3D NAND flash memory array with novel device designSijay Huang, Biswajit Ray. 1-2 [doi]
• Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHzSukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, David Lehninger, Thomas Kämpfe, Gerald Gerlach. 1-2 [doi]
• Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field PlateSajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck. 1-2 [doi]
• Exploration and Exploitation of Strain Engineering in 2D-FETsAnkit Kumar, Arnab Pal, Kamyar Parto, Wei Cao, Kaustav Banerjee. 1-2 [doi]
• Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode DepositionShun'ichiro Ohmi, Masakazu Tanuma, Joong-Won Shin. 1-2 [doi]
• Analysis of Polarization Switching in HZO/ZrO2 (HZZ) Nanolaminates based on Sub-lattice Phase-field ModelTae Ryong Kim, Atanu K. Saha, Sumeet Kumar Gupta. 1-2 [doi]
• Computational Associative Memory Powered by Ferroelectric MemoryKai Ni 0004, Yi Xiao, Shan Deng, Vijaykrishnan Narayanan. 1-2 [doi]
• Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/GaN HEMTsDing Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi. 1-2 [doi]
• A mobility study of monolayer MoS2 on low-κ/high-κ dielectricsZheng Sun, Cindy Chen, Joshua A. Robinson, Zhihong Chen, Jörg Appenzeller. 1-2 [doi]
• W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHzF. Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Ivan Milosavljevic, Georges Siddiqi, Micha Fireman, Andrea L. Corrion, David Fanning, Christi Peterson, Ariel Getter, Andrew Clapper. 1-2 [doi]
• Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal AnnealMarc Jaikissoon, Jung-Soo Ko, Eric Pop, Krishna C. Saraswat. 1-2 [doi]
• Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHzEmre Akso, Christopher Clymore, Wenjian Liu, Henry Collins, Brian Romanczyk, Weiyi Li, Nirupam Hatui, Christian Wurm, Stacia Keller, Matthew Guidry, Umesh K. Mishra. 1-2 [doi]
• 1.7-kV Vertical GaN p-n Diodes with Step-Graded Ion-Implanted Edge TerminationYu Duan, Andy Xie, Patrick Fay. 1-2 [doi]
• Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric ShellSoundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Joachim Knoch, Thomas Mikolajick, Jens Trommer. 1-2 [doi]
• Low Power and High Density Ternary-SRAM for Always-on ApplicationsYoung Eun Choi, Woo Seok Kim, Myoung Kim, Min-Woo Ryu, Kyung Rok Kim. 1-2 [doi]
• Controllability of Relaxation Behavior in Ag-based Diffusive MemristorsSolomon Amsalu Chekol, Rainer Waser, Susanne Hoffmann-Eifert. 1-2 [doi]
• Ni/TiO2/ $\beta$-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on VoltageJeremiah Williams, Nolan S. Hendricks, Weisong Wang, Aaron Adams, Joshua Piel, Daniel Dryden, Kyle J. Liddy, Nicholas Sepelak, Bradley Morell, Adam Miesle, Ahmad Islam, Andrew J. Green. 1-2 [doi]
• Natural Organic Fructose-based Nonvolatile Resistive Switching Memory for Environmental Sustainability in ComputingYuan Xing, Feng Zhao. 1-2 [doi]
• Josephson parametric amplifiers for rapid, high-fidelity measurement of solid-state qubitsS. Shankar, Z. Hao, M. Hatefipour, W. Strickland, T. Shaw, J. Shabani. 1-2 [doi]
• Freely Suspended Platinum Diselenide Membranes without Polymer Support for Piezoresistive Pressure SensingSebastian Lukas, Vikas Jangra, Nico Rademacher, Michael Gross, Eva Desgué, Maximilian Prechtl, Oliver Hartwig, Cormac Ó Coileáin, Tanja Stimpel-Lindner, Satender Kataria, Pierre Legagneux, Georg S. Duesberg, Max C. Lemme. 1-2 [doi]
• Technology scaling effects on SRAM-PUF reliability under ionizing radiationUmeshwarnath Surendranathan, Horace Wilson, Biswajit Ray. 1-2 [doi]
• Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency ApplicationsLogan Whitaker, Brian Markman, Mark J. W. Rodwell. 1-2 [doi]
• 5nm FinFET Cryogenic SRAM Evaluation for Quantum ComputingShivendra Singh Parihar, Simon Thomann, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch. 1-2 [doi]
• Reconfigurable Superconducting Logic Using Multi-Gate Switching of a Nano-CryotronShamiul Alam, Adam N. McCaughan, Ahmedullah Aziz. 1-2 [doi]
• $f_{MAX}$ Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate LengthYue Ma, Sigurd Wagner, Naveen Verma, James C. Sturm. 1-2 [doi]
• First Demonstration of GaN RF HEMTs on Engineered SubstratePradyot Yadav, Qingyun Xie, John Niroula, Gillian K. Micale, Hridibrata Pal, Tomás Palacios. 1-2 [doi]
• Large-Signal Modeling of GaN HEMTs using Fermi Kinetics and Commercial Hydrodynamics TransportE. White, Ashwin Tunga, Nicholas C. Miller, Matt Grupen, John D. Albrecht, Shaloo Rakheja. 1-2 [doi]
• Multifunctional Resistance Switching in Monolayer Hexagonal Boron Nitride AtomristorSung-Jin Yang, Yuqian Gu, Deji Akinwande. 1-2 [doi]
• FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System AccuracyChunguang Wang, Jeffry Victor, Atanu K. Saha, X. Chen, M. Si, T. Sharma, K. Roy, P. D. Ye, Sumeet Kumar Gupta. 1-2 [doi]
• 90 nm GaN Technology for Millimeter-Wave Power Applications to W-Band and BeyondPuneet Srivastava, David F. Brown, Louis Mt. Pleasant, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, John R. Jones, Wenhua Zhu, Hong M. Lu, Douglas M. Dugas, Kanin Chu. 1-2 [doi]
• Energy Efficient Ternary Device in 28-nm CMOS Technology with Excellent Short-Channel Effect Immunity and Variation Tolerance CharacteristicsWoo Seok Kim, Young Eun Choi, Myoung Kim, Min-Woo Ryu, Kyung Rok Kim. 1-2 [doi]
• $\beta$-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristicsZhongjie Ren, Hsien-Chih Huang, Hanwool Lee, Clarence Chan, Henry C. Roberts, Xihang Wu, Aadil Wassem, Wenjuan Zhu, Xiuling Li. 1-2 [doi]
• Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown VoltagePengfei Dong, Chenlu Wang, Qinglong Yan, Yingming Wang, Jian Wang, Sami Alghamdi, Zhihong Liu, JinCheng Zhang, Hong Zhou, Yue Hao. 1-2 [doi]
• High breakdown electric field in $\text{Ba}_{\mathrm{x}}\text{Sr}_{1-\mathrm{x}}\text{TiO}_{3}/\text{SiO}_{2}$ dielectric stack formed on (010) $\beta$-Ga2O3 substratesA. Miesle, A. E. Islam, E. Shin, G. Subramanyam, Kevin D. Leedy, S. Ganguli, D. Dryden, Kyle J. Liddy, Kelson D. Chabak, Andrew J. Green. 1-2 [doi]