$\beta$-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics

Zhongjie Ren, Hsien-Chih Huang, Hanwool Lee, Clarence Chan, Henry C. Roberts, Xihang Wu, Aadil Wassem, Wenjuan Zhu, Xiuling Li. $\beta$-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]

Abstract

Abstract is missing.