1.7-kV Vertical GaN p-n Diodes with Step-Graded Ion-Implanted Edge Termination

Yu Duan, Andy Xie, Patrick Fay. 1.7-kV Vertical GaN p-n Diodes with Step-Graded Ion-Implanted Edge Termination. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]

Abstract

Abstract is missing.