The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation

S. Ahmed, A. Islam, D. Dryden, Kyle J. Liddy, Nolan S. Hendricks, Neil A. Moser, Kelson D. Chabak, Andrew J. Green. The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]

Abstract

Abstract is missing.