S. Ahmed, A. Islam, D. Dryden, Kyle J. Liddy, Nolan S. Hendricks, Neil A. Moser, Kelson D. Chabak, Andrew J. Green. The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]
@inproceedings{AhmedIDLHMCG23,
title = {The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation},
author = {S. Ahmed and A. Islam and D. Dryden and Kyle J. Liddy and Nolan S. Hendricks and Neil A. Moser and Kelson D. Chabak and Andrew J. Green},
year = {2023},
doi = {10.1109/DRC58590.2023.10186995},
url = {https://doi.org/10.1109/DRC58590.2023.10186995},
researchr = {https://researchr.org/publication/AhmedIDLHMCG23},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023},
publisher = {IEEE},
isbn = {979-8-3503-2310-8},
}