Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications

Logan Whitaker, Brian Markman, Mark J. W. Rodwell. Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]

Abstract

Abstract is missing.