Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal

Marc Jaikissoon, Jung-Soo Ko, Eric Pop, Krishna C. Saraswat. Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]

Abstract

Abstract is missing.