F. Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Ivan Milosavljevic, Georges Siddiqi, Micha Fireman, Andrea L. Corrion, David Fanning, Christi Peterson, Ariel Getter, Andrew Clapper. W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]
Abstract is missing.