Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs

A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, P. Saunier, C. Lee, S. A. Ringel, A. R. Arehart. Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]

Abstract

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