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The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies

Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li. The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. Microelectronics Reliability, 52(11):2521-2526, 2012. [doi]

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