Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAM

Ruofei Hu, Jianshi Tang, Yue Xi, Zhixing Jiang, Yuyao Lu, Chengxiang Ma, Junchen Li, Bin Gao 0006, He Qian, Huaqiang Wu. Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAM. In IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, TX, USA, April 14-18, 2024. pages 1-6, IEEE, 2024. [doi]

Abstract

Abstract is missing.