Ayan K. Biswas, Daniel J. Lichtenwalner, Jae Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas. Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, TX, USA, April 14-18, 2024. pages 1-5, IEEE, 2024. [doi]
Abstract is missing.