Ayan K. Biswas, Daniel J. Lichtenwalner, Jae Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas. Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, TX, USA, April 14-18, 2024. pages 1-5, IEEE, 2024. [doi]
@inproceedings{BiswasLPHGGB24,
title = {Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs},
author = {Ayan K. Biswas and Daniel J. Lichtenwalner and Jae Hyung Park and Brett Hull and Satyaki Ganguly and Donald A. Gajewski and Elif Balkas},
year = {2024},
doi = {10.1109/IRPS48228.2024.10529422},
url = {https://doi.org/10.1109/IRPS48228.2024.10529422},
researchr = {https://researchr.org/publication/BiswasLPHGGB24},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, TX, USA, April 14-18, 2024},
publisher = {IEEE},
isbn = {979-8-3503-6976-2},
}