Table of Contents

• NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate ComputingYu-Hsuan Lin, Po-Hao Tseng, Feng-Min Lee, Ming-Hsiu Lee, Chih-Chang Hsieh, Dai-Ying Lee, Keh-Chung Wang, Chih-Yuan Lu. 1-4 [doi]
• Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXPSijung Yoo, Donghoon Kim, Yoon Mo Koo, Sujee Kim Wooju Jeong, Hyungjoon Shim, Won Jun Lee, Beom Seok Lee, Seungyun Lee, Hyejung Choi, Hyung-Dong Lee, Taehoon Kim, Myung Hee Na. 1-4 [doi]
• At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line CellsS. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Y. Oniki, G. Van den bosch, Maarten Rosmeulen. 1-4 [doi]
• An Analytical Model for Thin Film Pattern-dependent Asymmetric Wafer Warpage PredictionWeishen Chu, Seyyed Ehsan Esfahani Rashidi, Yanli Zhang, Johann Alsmeier, Toshiyuki Sega. 1-4 [doi]
• A comprehensive variability study of doped HfO2 FeFET for memory applicationsNicolo Ronchi, Lars-Åke Ragnarsson, U. Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, G. Van den bosch, Jan Van Houdt. 1-4 [doi]
• Extreme Temperature (> 200 °C), Radiation Hard (> 1 Mrad), Dense (sub-50 nm CD), Fast (2 ns write pulses), Non-Volatile Memory TechnologySaurabh V. Suryavanshi, Greg Yeric, Max Irby, X. M. Henry Huang, Glen Rosendale, Lucian Shifren. 1-4 [doi]
• High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reductionL. Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. Bastos, S. Ramesh, G. Van den bosch, Maarten Rosmeulen. 1-4 [doi]
• SSD Drive Failure Prediction on Alibaba Data Center Using Machine LearningLei Chen, Zongpeng Zhu, Anyu Li, Najmeh Mashhadi, Robert Frickey, Jinhe Ye, Xin Guo. 1-4 [doi]
• 1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computingJoel Minguet Lopez, François Rummens, L. Reganaz, A. Heraud, Tifenn Hirtzlin, Laurent Grenouillet, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Niccolo Castellani, V. Meli, S. Martin, T. Magis, Elisa Vianello, C. Sabbione, Damien Deleruyelle, Marc Bocquet, Jean Michel Portal, Gabriel Molas, François Andrieu. 1-4 [doi]
• Liquid Memory and the Future of Data StorageMaarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, H. Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, G. Van den bosch, Arnaud Furnémont. 1-4 [doi]
• Persistent xSPI STT-MRAM with up to 400MB/s Read and Write ThroughputSyed M. Alam, Dimitri Houssameddine, F. Neumeyer, I. Rahman, M. DeHerrera, S. Ikegawa, P. Sanchez, X. Zhang, Y. Wang, J. Williams, Dietmar Gogl, H. Xu, M. Farook, D. Aceves, H. K. Lee, Fred B. Mancoff, M. Chou, CH. Tan, B. Huang, S. Mukherjee, M. Lu, A. Shah, K. Nagel, Y. Kim, S. Aggarwal. 1-4 [doi]
• High temperature stability embedded ReRAM for 2x nm node and beyondGabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle, Quentin Rafhay, Niccolo Castellani, L. Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, V. Meli, S. Martin, François Andrieu, Laurent Grenouillet. 1-4 [doi]
• Racetrack Memory: a high capacity, high performance, non-volatile spintronic memoryStuart Parkin. 1-4 [doi]
• From Emergence to Prevalence: 22FDX® Embedded STT-MRAMJohannes Müller, Aleksandra Titova, Hongsik Yoon, Thomas Merbeth, Martin Weisheit, Georg Wolf, Sanjeeb Bharali, Bert Pfefferling, Yuichi Otani, Tetyana Shapoval, Alberto Cagliani, Ferenc Vajda, Pedram Sadeghi, Christiana Villas-Boas Grimm, Frank Krause, Ines Altendorf, Gabriele Congedo, Robert Binder, Joachim Metzger, Alexander Lajn, Markus Langner, Young Seon You, Oliver Kallensee, Vinayak Bharat Naik, Kazutaka Yamane, Steven Soss. 1-4 [doi]
• Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor ReliabilityT. Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer, D. Sourav, A. S. Royet, Ayse Sünbül, A. Prabhu, Kati Kühnel, Malte Czernohorsky, M. Rudolph, R. Hoffmann, Christelle Charpin-Nicolle, Laurent Grenouillet, Thomas Kämpfe, Konrad Seidel. 1-4 [doi]
• Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performanceRuben Alcala, Furqan Mehmood, Pramoda Vishnumurthy, Terence Mittmann, Thomas Mikolajick, Uwe Schroeder. 1-4 [doi]
• NanoBridge Technology for Embedded Novolatile Memory ApplicationMunehiro Tada. 1-4 [doi]
• Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS TechnologyDavid Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer, Konstantin Mertens, Thomas Kämpfe, Kati Biedermann, Matthias Landwehr, Andreas Heinig, Defu Wang, Yukai Shen, Kerstin Bernert, Steffen Thiem, Konrad Seidel. 1-4 [doi]
• Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-MemorySangsu Park, Gyonhui Lee, Youngjae Kwon, Dong Ik Suh, Hanwool Lee, Sangeun Je, Dabin Kim, Dohan Lee, Seungwook Ryu, SeungBum Kim, Euiseok Kim, Sunghoon Lee, Kyoung Park, Seho Lee, Myung Hee Na, Seonyong Cha. 1-3 [doi]
• Endurance improvements and defect characterization in ferroelectric FETs through interface fluorinationYannick Raffel, Ricardo Olivo, Maximilian Lederer, F. Müller, R. Hoffmann, T. Ali, Konstantin Mertens, Luca Pirro, Maximilian Drescher, Sven Beyer, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng, J. Heitmann. 1-4 [doi]
• Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected ChargesJae-Gil Lee, Joongsik Kim, Dong Ik Suh, Ildo Kim, Gwon Deok Han, Seung Wook Ryu, Seho Lee, Myung Hee Na, Seonyong Cha, Hyeon-woo Park, Cheol Seong Hwang. 1-4 [doi]
• Spin-Transfer-Torque MRAM: the Next Revolution in MemoryDaniel C. Worledge. 1-4 [doi]
• Thermally stable, packaged aware LV HKMG platforms benchmark to enable low power I/O for next 3D NAND generationsAlessio Spessot, Shairfe Muhammad Salahuddin, Ricardo Escobar, Romain Ritzenthaler, Yang Xiang, Rahul Budhwani, Eugenio Dentoni Litta, Elena Capogreco, Joao Bastos, Yangyin Chen, Naoto Horiguchi. 1-4 [doi]
• A Physics based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield EnhancementNishtha S. Gaul, Akhilesh Jaiswal 0002, Hongsik Yoon, Taeyoung Lee, Kazutaka Yamane, Joseph Versaggi, Rick Carter, Bipul C. Paul. 1-4 [doi]
• Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalentsMilan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher. 1-4 [doi]
• Non Volatile Memory in Advanced Smart Power technology: product requirements and integration solutionsGiuseppe Croce. 1-4 [doi]
• 3D NAND Flash Status and TrendsLars Heineck, Jin Liu. 1-4 [doi]
• Performance Benchmarking of Spin-Orbit Torque Magnetic RAM (SOT-MRAM) for Deep Neural Network (DNN) AcceleratorsYandong Luo, Piyush Kumar, Yu-Ching Liao, William Hwang, Fen Xue, Wilman Tsai, Shan X. Wang, Azad Naeemi, Shimeng Yu. 1-4 [doi]
• Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic OperationHitomi Tanaka, Yuta Aiba, Takashi Maeda, Kensuke Ota, Yusuke Higashi, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Tomoya Sanuki. 1-4 [doi]
• A novel 3D 1T1R RRAM architecture for memory-centric Hyperdimensional ComputingT. Dubreuil, P. Amari, S. Barraud, Joris Lacord, Eduardo Esmanhotto, V. Meli, S. Martin, Niccolo Castellani, Bernard Previtali, François Andrieu. 1-4 [doi]
• Modeling Environment for Ge-rich GST Phase Change Memory CellsMatteo Baldo, L. Laurin, Elisa Petroni, Giulia Samanni, M. Allegra, Enrico Gomiero, Daniele Ielmini, Andrea Redaelli. 1-4 [doi]
• In-Memory 3D NAND Flash Hyperdimensional Computing Engine for Energy-Efficient SARS-CoV-2 Genome SequencingPo-Kai Hsu, Shimeng Yu. 1-4 [doi]
• Bi-directional read method to reduce SOT-specific read disturbance for highly reliable SOT-MRAMAkihiro Yamada, Yuwa Kishi, Takayuki Kawahara. 1-4 [doi]
• Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based MemorySunghyun Yoon, Sung-In Hong, Garam Choi, Daehyun Kim, Ildo Kim, Seok Min Jeon, Changhan Kim, Kyunghoon Min. 1-4 [doi]
• Edge Retraining of FeFET LM-GA CiM for Write Variation & Reliability Error CompensationShinsei Yoshikiyo, Naoko Misawa, Kasidit Toprasertpong, Shinichi Takagi, Chihiro Matsui, Ken Takeuchi. 1-4 [doi]
• Reliability of 28nm embedded RRAM for consumer and industrial productsChristian Peters, Frank Adler, Karl Hofmann, Jan Otterstedt. 1-3 [doi]
• Non-volatile Memory Application to Quantum Error Correction with Non-uniformly Quantized CiMYuya Ichikawa, Akira Goda, Chihiro Matsui, Ken Takeuchi. 1-4 [doi]
• Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error RateGabriele Navarro, C. Sabbione, V. Meli, L. E. Nistor, M. Frei, Julien Garrione, M. Tessaire, F. Fillot, Nicolas Bernier, Emmanuel Nolot, Benoit Sklénard, J. Li, S. Martin, Niccolo Castellani, Guillaume Bourgeois, Marie-Claire Cyrille, François Andrieu. 1-4 [doi]