Shairfe Muhammad Salahuddin - researchr alias

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Viewing Publication 1 - 8 from 8

2023

2022

Thermally stable, packaged aware LV HKMG platforms benchmark to enable low power I/O for next 3D NAND generationsAlessio Spessot, Shairfe Muhammad Salahuddin, Ricardo Escobar, Romain Ritzenthaler, Yang Xiang, Rahul Budhwani, Eugenio Dentoni Litta, Elena Capogreco, Joao Bastos, Yangyin Chen, Naoto Horiguchi. imw2 2022: 1-4 [doi]

2016

Write Assist SRAM Cell with Asymmetrical Bitline Access Transistors for Enhanced Data Stability and Write AbilityShairfe Muhammad Salahuddin, Volkan Kursun. jcsc, 25(1), 2016. [doi]

2014

High-speed and low-leakage FinFET SRAM cell with enhanced read and write voltage marginsShairfe Muhammad Salahuddin, Volkan Kursun. isicir 2014: 312-315 [doi]

2013

Underlap engineered eight-transistor SRAM cell for stronger data stability enhanced write ability and suppressed leakage power consumptionShairfe Muhammad Salahuddin, Volkan Kursun. icecsys 2013: 25-28 [doi]

A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs for enhanced read data stability and write abilityShairfe Muhammad Salahuddin, Hailong Jiao, Volkan Kursun. isqed 2013: 353-358 [doi]

Low-leakage hybrid FinFET SRAM cell with asymmetrical gate overlap / underlap bitline access transistors for enhanced read data stabilityShairfe Muhammad Salahuddin, Hailong Jiao, Volkan Kursun. iscas 2013: 2331-2334 [doi]

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