Shairfe Muhammad Salahuddin, Volkan Kursun. Underlap engineered eight-transistor SRAM cell for stronger data stability enhanced write ability and suppressed leakage power consumption. In 20th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2013, Abu Dhabi, December 8-11, 2013. pages 25-28, IEEE, 2013. [doi]
Abstract is missing.