Sunghyun Yoon, Sung-In Hong, Garam Choi, Daehyun Kim, Ildo Kim, Seok Min Jeon, Changhan Kim, Kyunghoon Min. Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory. In IEEE International Memory Workshop, IMW 2022, Dresden, Germany, May 15-18, 2022. pages 1-4, IEEE, 2022. [doi]
Abstract is missing.