Syed M. Alam, Dimitri Houssameddine, F. Neumeyer, I. Rahman, M. DeHerrera, S. Ikegawa, P. Sanchez, X. Zhang, Y. Wang, J. Williams, Dietmar Gogl, H. Xu, M. Farook, D. Aceves, H. K. Lee, Fred B. Mancoff, M. Chou, CH. Tan, B. Huang, S. Mukherjee, M. Lu, A. Shah, K. Nagel, Y. Kim, S. Aggarwal. Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput. In IEEE International Memory Workshop, IMW 2022, Dresden, Germany, May 15-18, 2022. pages 1-4, IEEE, 2022. [doi]
Abstract is missing.