Table of Contents

• Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2Jung-Soo Ko, Zichen Zhang, Sol Lee, Marc Jaikissoon, Robert K. A. Bennett, Kwanpyo Kim, Andrew C. Kummel, Prabhakar Bandaru, Eric Pop, Krishna C. Saraswat. 1-4 [doi]
• Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric DielectricsJ. L. Mazzola, M. Greatti, C. Monzio Compagnoni, Alessandro S. Spinelli, V. Marano, M. Lauria, D. Paci, F. Speroni, Gerardo Malavena. 1-4 [doi]
• 28Si for spin qubit applicationsG. Elbaz, Mikaël Cassé, V. Labracherie, G. Roussely, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, F. Balestro, Matias Urdampilleta, Tristan Meunier, Bruna Cardoso Paz. 5-8 [doi]
• MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency MaximizationW. C. Lin, H.-P. Huang, K.-H. Kao, M.-H. Chiang, D. Lu, W. C. Hsu, Y. H. Wang, W. C.-Y. Ma, H.-H. Tsai, Y.-J. Lee, H.-L. Chiang, J. F. Wang, Iuliana P. Radu. 9-12 [doi]
• First Foundry Platform Demonstration of Hybrid Tunnel FET and MOSFET Circuits Based on a Novel Laminated Well Isolation TechnologyKaifeng Wang, Yongqin Wu, Ye Ren, Renjie Wei, Zerui Chen, Jianfeng Hang, Zhixuan Wang, Fangxing Zhang, Lining Zhang, Chunyu Peng, Xiulong Wu, Le Ye, Kai Zheng, Jin Kang, Xusheng Wu, Weihai Bu, Ru Huang, Qianqian Huang. 13-16 [doi]
• Impact of layout and channel processing on CMOS low frequency noise variabilityFausto Simioni, Lorenzo Labate, Daniele Savio, Mariella Brizzi, Federica Ottogalli, Riccardo Marchetti, Silvia Brazzelli, Mattia Rossetti. 17-20 [doi]
• 40nm SONOS Embedded Select in Trench MemoryRadouane Habhab, Vincenzo Della Marca, Pascal Masson, Nadia Miridi, Clement Pribat, Simon Jeannot, Thibault Kempf, Marc Mantelli, Philippe Lorenzini, Jean-Marc Voisin, Arnaud Régnier, Stephan Niel, Francesco La Rosa. 21-24 [doi]
• One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and BeyondYuya Matsuzawa, Yuki Ohnishi, Kazuhiro Katono, Yusuke Muto, Takayuki Tsukagoshi, Hiroki Tokuhira, Kei Sakamoto, Hisakazu Matsumori, Hiroyuki Ode, Shosuke Fujii, Hide Tanaka, Takeshi Fujimaki. 25-28 [doi]
• ePCM reliability improvement through active material carbon implantationElisabetta Palumbo, Alessandro Motta, Elisa Petroni, Daniele Gallinari, Annalisa Gilardini, Amos Galbiati, Massimo Borghi, Roberto Annunziata, Andrea Redaelli. 29-32 [doi]
• Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin FilmsHannes Dahlberg, Lars-Erik Wernersson. 33-36 [doi]
• Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode CircuitsRaphael Behrle, Martien I. Den Hertog, Alois Lugstein, Walter M. Weber, Masiar Sistani. 37-40 [doi]
• Magnetic Domain Wall Memory: A DTCO study for Memory ApplicationsM. Gupta, Siddharth Rao, Gouri Sankar Kar, S. Couet. 41-44 [doi]
• Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2Markus Müller, Christoph Weimer, Michael Schröter. 45-48 [doi]
• A Model for the Open-Circuit Voltage Dependence on Temperature for Integrated DiodesPablo Fernández-Peramo, Juan A. Leñero-Bardallo, María López-Carmona, Ángel Rodríguez-Vázquez. 49-52 [doi]
• NITSRI-2D: A Surface Potential Based SPICE Compatible Model for pH-Sensitive FETs Based on 2-D MaterialsTamanna Nazeer, Sheikh Aamir Ahsan. 53-56 [doi]
• Electrothermal modeling of junctionless vertical Si nanowire transistors for 3D logic circuit designYifan Wang, Chhandak Mukherjee, Houssem Rezgui, Marina Deng, Cristell Maneux, Sara Mannaa, Ian O'Connor, Jonas Müller, Sylvain Pelloquin, Guilhem Larrieu. 57-60 [doi]
• Hot-Carrier Degradation modeling of DCR drift in SPADsMathieu Sicre, David Roy 0001, Françis Calmon. 61-64 [doi]
• Characterisation of Photodiodes in 22 nm FDSOI at 850 nmJelle H. T. Bakker, Mark S. Oude Alink, Jurriaan Schmitz, Bram Nauta. 65-68 [doi]
• Understanding Distance-Dependent Variations for Analog Circuits in a FinFET TechnologyMeghna Madhusudan, Jitesh Poojary, Arvind K. Sharma, Ramprasath S, Kishor Kunal, Sachin S. Sapatnekar, Ramesh Harjani. 69-72 [doi]
• Performance Comparison of SRAM Designs Implemented with Silicon-On-Insulator Nanosheet Transistors and Bulk FinFETsPo-Chih Chen, Yi-Ting Wu, Meng-Hsueh Chiang. 73-76 [doi]
• A Study of the Variability and Design Considerations of Ferroelectric VNAND Memories With Polycrystalline Films Using An Experimentally Validated TCAD ModelM. Thesberg, Franz Schanovsky, Zlatan Stanojevic, Oskar Baumgartner, Markus Karner. 77-80 [doi]
• Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking NeuronNoémie Bidoul, Teodor Rosca, Adrian M. Ionescu, Denis Flandre. 81-84 [doi]
• Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM TechnologyYiqin Zeng, Zhetao Ding, Xueyang Li, Minglei Ma, Yue Peng, Rongzong Shen, Gaobo Lin, Chengji Jin, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han. 85-88 [doi]
• New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during ReadoutChang Su, Zhongxin Liang, Zhiyuan Fu, Shaodi Xu, Kaifeng Wang, Puyang Cai, Liang Chen, Ru Huang, Qianqian Huang. 89-92 [doi]
• Comprehensive Modeling of Advanced Composite Magnetoresistive DevicesViktor Sverdlov, Mario Bendra, Bernhard Pruckner, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr. 93-96 [doi]
• STT-MRAM Stochastic and Defects-aware DTCO for Last Level Cache at Advanced Process NodesF. García-Redondo, S. Rao, M. Gupta, Manu Perumkunnil, Y. Xiang, D. Abdi, Simon Van Beek, S. Couet, Marie Garcia Bardon. 97-100 [doi]
• 40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applicationsS. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, Tulio Chaves de Albuquerque, Frederic Monsieur, H. Audouin, C. A. Legrand, C. Diouf, J. Azevedo Goncalves, C. Belem Goncalves, C. Durand, N. Vulliet, L. Berthier, Emeline Souchier, P. Garcia, S. Jan, M. Hello, M. L. Rellier, Patrick Scheer, B. Duriez, Xavier Garros, T. Bordignon, F. Paillardet, Pascal Chevalier 0002. 101-104 [doi]
• ® Device Optimization for mmW PAMingcheng Chang, Zaid Al-Husseini, Shafi Syed, Wafa Arfaoui, Tianbing Chen, Andreas Knorr. 105-108 [doi]
• Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?Daniel Gheysens, Alain Fleury, Stéphane Monfray, Frédéric Gianesello, Philippe Cathelin, Jean-François Robillard, David Troadec, Emmanuel Dubois 0002. 109-112 [doi]
• Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applicationsSukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Maximilian Lederer, Yannick Raffel, Kai Ni 0004, Xunzhao Yin, Thomas Kämpfe, Gerald Gerlach. 113-116 [doi]
• Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memoryT. Dubreuil, S. Barraud, J.-M. Pedini, J.-M. Hartmann, F. Boulard, A. Sarrazin, A. Gharbi, Johannes Sturm, A. Lambert, S. Martin, N. Castellani, A. Anotta, A. Magalhaes-Lucas, Aurelie Souhaite, François Andrieu. 117-120 [doi]
• Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconateMihaela Ioana Popovici, Jasper Bizindavyi, Gourab De, Dae Seon Kwon, Gouri Sankar Kar, Jan Van Houdt. 121-124 [doi]
• Silicon Technology Innovation Opportunities for Applications at 0.1 to 1 THz Beyond that for TransistorsKenneth K. O, Muhammad Awais, Salahuddin Tariq, Matthew Stark, Suprovo Ghosh, Farooq Muhammad Musab, Behnam Pouya, Haidong Guo, Goutham Murugesan, Suhwan Lee, Sarfraz Shariff, Walter Sosa Portillo, Frank Zhang. 125-131 [doi]
• Near-IR response of highly-strained Si photodetector linking first principles and TCADNicolas Roisin, Jean-Pierre Raskin, Denis Flandre. 132-135 [doi]
• SPICE Model of SPAD Transient Intrinsic Response Validated using Mixed-Mode TCAD SimulationsTom Klauner, Iman Sabri Alirezaei, Nicolas Roisin, Nicolas André, Denis Flandre. 136-139 [doi]
• Extended Temperature Modeling of InGaAs/InP SPADsEkin Kizilkan, Utku Karaca, V. Pesic, M. J. Lee, Claudio Bruschini, A. J. SpringThorpe, A. W. Walker, C. Flueraru, Oliver J. Pitts, Edoardo Charbon. 140-143 [doi]
• Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADsDenis Rideau, Wilfried Uhring, R. A. Bianchi, Rémi Helleboid, Gabriel Mugny, Jérémy Grebot, Jean-Robert Manouvrier, R. Neri, F. Brun, Mohammadreza Dolatpoor Lakeh, Sven Rink, Jean-Baptiste Kammerer, Christophe Lallement, E. Lacombe, Dominique Golanski, Bruce Rae, T. M. Bah, F. Twaddle, V. Quenette, G. Marchand, Christel Buj, R. Fillon, Y. Henrion, Isobel Nicholson, Megan Agnew, M. Basset, R. Perrier, M. Al-Rawhani, Bastien Mamdy, S. Pellegrin, Gilles Gouget, P. Maciazek, Andre Juge, A. Dartigues, Hélène Wehbe-Alause. 144-147 [doi]
• RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperatureQ. Berlingard, M. Moulin, J.-P. Michel, T. Fache, I. Charlet, C. Plantier, Z. Chalupa, Jose Lugo-Alvarez, Jean-Pierre Raskin, Louis Hutin, Mikaël Cassé. 148-151 [doi]
• A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTsRana ElKashlan, Hao Yu, Ahmad Khaled, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais. 152-155 [doi]
• Characterization and Modeling of High Voltage MOS Robustness During Recirculation in Smart Power technologiesMichele Basso, Marco Sambi, Andrea Marcovati. 156-159 [doi]
• 2Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Nathali Franchina-Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Kurt Wostyn, Loris Angelo Labbate, Sebastien Couet, Gouri Sankar Kar. 164-167 [doi]