Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory

T. Dubreuil, S. Barraud, J.-M. Pedini, J.-M. Hartmann, F. Boulard, A. Sarrazin, A. Gharbi, Johannes Sturm, A. Lambert, S. Martin, N. Castellani, A. Anotta, A. Magalhaes-Lucas, Aurelie Souhaite, François Andrieu. Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory. In 53rd IEEE European Solid-State Device Research Conference, ESSDERC 2023, Lisbon, Portugal, September 11-14, 2023. pages 117-120, IEEE, 2023. [doi]

Abstract

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