Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

T. Dubreuil, S. Barraud, J.-M. Pedini, J.-M. Hartmann, F. Boulard, A. Sarrazin, A. Gharbi, Johannes Sturm, A. Lambert, S. Martin, N. Castellani, A. Anotta, A. Magalhaes-Lucas, Aurelie Souhaite, François Andrieu. Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory. In 53rd IEEE European Solid-State Device Research Conference, ESSDERC 2023, Lisbon, Portugal, September 11-14, 2023. pages 117-120, IEEE, 2023. [doi]

This author has not been identified. Look up 'T. Dubreuil' in GoogleThis author has not been identified. Look up 'S. Barraud' in GoogleThis author has not been identified. Look up 'J.-M. Pedini' in GoogleThis author has not been identified. Look up 'J.-M. Hartmann' in GoogleThis author has not been identified. Look up 'F. Boulard' in GoogleThis author has not been identified. Look up 'A. Sarrazin' in GoogleThis author has not been identified. Look up 'A. Gharbi' in GoogleThis author has not been identified. Look up 'Johannes Sturm' in GoogleThis author has not been identified. Look up 'A. Lambert' in GoogleThis author has not been identified. Look up 'S. Martin' in GoogleThis author has not been identified. Look up 'N. Castellani' in GoogleThis author has not been identified. Look up 'A. Anotta' in GoogleThis author has not been identified. Look up 'A. Magalhaes-Lucas' in GoogleThis author has not been identified. Look up 'Aurelie Souhaite' in GoogleThis author has not been identified. Look up 'François Andrieu' in Google

runs on WebDSL