Chang Su, Zhongxin Liang, Zhiyuan Fu, Shaodi Xu, Kaifeng Wang, Puyang Cai, Liang Chen, Ru Huang, Qianqian Huang. New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout. In 53rd IEEE European Solid-State Device Research Conference, ESSDERC 2023, Lisbon, Portugal, September 11-14, 2023. pages 89-92, IEEE, 2023. [doi]
Abstract is missing.