Chang Su, Zhongxin Liang, Zhiyuan Fu, Shaodi Xu, Kaifeng Wang, Puyang Cai, Liang Chen, Ru Huang, Qianqian Huang. New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout. In 53rd IEEE European Solid-State Device Research Conference, ESSDERC 2023, Lisbon, Portugal, September 11-14, 2023. pages 89-92, IEEE, 2023. [doi]
@inproceedings{SuLFXWCCHH23,
title = {New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout},
author = {Chang Su and Zhongxin Liang and Zhiyuan Fu and Shaodi Xu and Kaifeng Wang and Puyang Cai and Liang Chen and Ru Huang and Qianqian Huang},
year = {2023},
doi = {10.1109/ESSDERC59256.2023.10268479},
url = {https://doi.org/10.1109/ESSDERC59256.2023.10268479},
researchr = {https://researchr.org/publication/SuLFXWCCHH23},
cites = {0},
citedby = {0},
pages = {89-92},
booktitle = {53rd IEEE European Solid-State Device Research Conference, ESSDERC 2023, Lisbon, Portugal, September 11-14, 2023},
publisher = {IEEE},
isbn = {979-8-3503-0423-7},
}