Barry P. Linder - researchr alias

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Viewing Publication 1 - 15 from 15

2022

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced DegradationErnest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo. irps 2022: 2 [doi]

2019

Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBDAndrew Kim, Ernest Y. Wu, Baozhen Li, Barry P. Linder. irps 2019: 1-5 [doi]

Long Term NBTI Relaxation Under AC and DC Biased Stress and RecoveryElnatan Mataev, James H. Stathis, Giuseppe La Rosa, Barry P. Linder. irps 2019: 1-5 [doi]

2018

2015

2013

Improving and optimizing reliability in future technologies with high-κ dielectricsBarry P. Linder, E. Cartier, S. Krishnan, E. Wu. vlsi-dat 2013: 1-4 [doi]

2003

Influence and model of gate oxide breakdown on CMOS invertersR. Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang. mr, 43(9-11):1439-1444, 2003. [doi]

Reliability of ultra-thin oxides in CMOS circuitsJames H. Stathis, Barry P. Linder, R. Rodríguez, Salvatore Lombardo. mr, 43(9-11):1353-1360, 2003. [doi]

Circuit implications of gate oxide breakdownJames H. Stathis, R. Rodríguez, Barry P. Linder. mr, 43(8):1193-1197, 2003. [doi]

2002

Dependence of Post-Breakdown Conduction on Gate Oxide ThicknessSalvatore Lombardo, James H. Stathis, Barry P. Linder. mr, 42(9-11):1481-1484, 2002. [doi]

Analysis of the effect of the gate oxide breakdown on SRAM stabilityR. Rodríguez, James H. Stathis, Barry P. Linder, S. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, A. J. Bhavnagarwala, Salvatore Lombardo. mr, 42(9-11):1445-1448, 2002. [doi]

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