Salvatore Lombardo - researchr alias

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Viewing Publication 1 - 18 from 18

2017

2016

Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacksFelix Palumbo, Salvatore Lombardo, Moshe Eizenberg. mr, 56:22-28, 2016. [doi]

2015

General features of progressive breakdown in gate oxides: A compact modelFelix Palumbo, Moshe Eizenberg, Salvatore Lombardo. irps 2015: 5 [doi]

2014

2010

Radiation effects in nitride read-only memoriesS. Libertino, D. Corso, G. Murè, A. Marino, F. Palumbo, F. Principato, G. Cannella, T. Schillaci, S. Giarusso, F. Celi, M. Lisiansky, Y. Roizin, Salvatore Lombardo. mr, 50(9-11):1857-1860, 2010. [doi]

2009

Feasibility Studies on Si-Based BiosensorsSebania Libertino, Venera Aiello, Antonino Scandurra, Marcella Renis, Fulvia Sinatra, Salvatore Lombardo. sensors, 9(5):3469-3490, 2009. [doi]

2008

Detection and Classification of Single-Electron Jumps in Si Nanocrystal MemoriesCalogero Pace, Gino Giusi, Felice Crupi, Salvatore Lombardo. tim, 57(2):364-368, 2008. [doi]

A novel approach to characterization of progressive breakdown in high-k/metal gate stacksR. Pagano, Salvatore Lombardo, F. Palumbo, P. Kirsch, S. A. Krishnan, C. Young, R. Choi, G. Bersuker, James H. Stathis. mr, 48(11-12):1759-1764, 2008. [doi]

2007

Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltageD. Corso, S. Aurite, E. Sciacca, D. Naso, Salvatore Lombardo, A. Santangelo, M. C. Nicotra, S. Cascino. mr, 47(4-5):806-809, 2007. [doi]

Study of nanocrystal memory integration in a Flash-like NOR deviceCosimo Gerardi, Salvatore Lombardo, Giuseppe Ammendola, Giovanni Costa, Valentina Ancarani, Domenico Mello, Stella Giuffrida, Maria Cristina Plantamura. mr, 47(4-5):593-597, 2007. [doi]

Guest EditorialSalvatore Lombardo. mr, 47(4-5):477-478, 2007. [doi]

2003

Reliability of ultra-thin oxides in CMOS circuitsJames H. Stathis, Barry P. Linder, R. Rodríguez, Salvatore Lombardo. mr, 43(9-11):1353-1360, 2003. [doi]

2002

Dependence of Post-Breakdown Conduction on Gate Oxide ThicknessSalvatore Lombardo, James H. Stathis, Barry P. Linder. mr, 42(9-11):1481-1484, 2002. [doi]

Analysis of the effect of the gate oxide breakdown on SRAM stabilityR. Rodríguez, James H. Stathis, Barry P. Linder, S. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, A. J. Bhavnagarwala, Salvatore Lombardo. mr, 42(9-11):1445-1448, 2002. [doi]

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