Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage

D. Corso, S. Aurite, E. Sciacca, D. Naso, Salvatore Lombardo, A. Santangelo, M. C. Nicotra, S. Cascino. Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage. Microelectronics Reliability, 47(4-5):806-809, 2007. [doi]

Abstract

Abstract is missing.