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Analysis of the effect of the gate oxide breakdown on SRAM stability

R. Rodríguez, James H. Stathis, Barry P. Linder, S. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, A. J. Bhavnagarwala, Salvatore Lombardo. Analysis of the effect of the gate oxide breakdown on SRAM stability. Microelectronics Reliability, 42(9-11):1445-1448, 2002. [doi]

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